Pulse switching characterization of organometallic chemical vapor deposited pbzrxti1-xo3, thin films for high-density memory applications

Integrated Ferroelectrics

Volumn 7, Issue 1-4, 1995, Pages 123-138

  Taylor, D J ^a   Larsen, P K ^a   Dormans, G J M ^a   De Veirman, A E M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040541338     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584589508220226     Document Type: Article

References (19)

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2. Proc. of the Third International Symposium on Integrated Ferroelectrics. Integrated Ferroelectrics, 1 (1992).
3. P.K. Larsen. G.A.C.M. Spierings. R. Cuppens and G.J.M. Dormans. Microelectron. Eng., 22. 53 (1993).
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13. See for example. D.M. Smyth. Ferroelectrics. 116, 117 (1990);
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