Storage of electrons in shallow donor excited states of GaP:Te

Physical Review B - Condensed Matter and Materials Physics

Volumn 55, Issue 15, 1997, Pages 9243-9246

  Ganichev, S ^a   Raab, W ^a   Zepezauer, E ^a   Prettl, W ^a   Yassievich, I ^b  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040452133     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.9243     Document Type: Article

References (10)

1. J. Neugebauer and C. G. Van de Walle, Phys. Rev. Lett. 75, 4452 (1995).
2. Ya.E. Pokrovskii, O.I. Smirnova and N.A. Khvalkovskii, Solid State Commun 93, 405 (1995).
3. S. D. Ganichev, W. Prettl and P. G. Huggard, Phys. Rev. Lett. 71, 3882 (1993).
4. D.N. Nasledov, V.V. Negreskul, S.I. Radautsan, S.V. Slobodchikov, Phys. Status Solidi 10, 37 (1965).
5. H.C. Montgomery, J. Appl. Phys. 39, 2002 (1968).
6. R.Z. Bachrach, P.D. Darkus and O.G. Lorimor, J. Appl. Phys. 45, 4971 (1974).
7. C.H. Henry and D.V. Lang, Phys. Rev. B 15, 989 (1977).
8. P. Dean, Oxygen in Gallium Phosphide, Deep Centers in Semiconductors (Gordon and Breach Science Publishers, New York, 1986).
9. V.N. Abakumov, V.I. Perel, and I.N. Yassievich, Nonradiative Recombination in Semiconductors, Modern Problems in Condensed Matter Sciences Vol. 33 (North-Holland, Amsterdam, 1991).
10. W. Scott, J. Appl. Phys. 50, 472 (1979).