Coexistence of the DX center with nonmetastable states of the donor impurity in Si-dopeAs: Effects on the low-temperature electron mobility

Physical Review B - Condensed Matter and Materials Physics

Volumn 53, Issue 16, 1996, Pages 10715-10727

  Baraldi, A ^a   Frigeri, P ^a   Ghezzi, C ^a   Parisini, A ^a   Bosacchi, A ^b   Franchi, S ^b   Gombia, E ^b   Mosca, R ^b  

^a UNIVERSITY OF PARMA   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040442588     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.10715     Document Type: Article

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