Near band gap photoreflectance studies in CdTe, CdTe:V and CdTe:Ge crystals

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 297-301

  Pal, U ^a   Herrera Perez J L ^a   Piqueras, J ^b   Dieguez E ^c  

^a BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^c UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

Cadmium telluride; Photoreflectance

Indexed keywords

COMPOSITION EFFECTS; ENERGY GAP; GERMANIUM; SEMICONDUCTOR DOPING; THERMAL EFFECTS; VANADIUM;

ELECTROREFLECTANCE (ER); LINE SHAPE ANALYSIS; PHOTOREFLECTANCE (PR); THIRD DERIVATIVE FUNCTIONAL FORM (TDFF);

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0040338435     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01725-4     Document Type: Article

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