Interpretation of Auger Depth Profiles of Thin SiC Layers on Si

Mikrochimica Acta

Volumn 125, Issue 1, 1997, Pages 219-222

  Ecke, Gernot ^a   Rößler, Hans ^a   Cimalla, Volker ^a   Pezoldt, Jörg ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Atomic mixing; Auger electron spectroscopy; Depth resolution; Silicon carbide

Indexed keywords

EID: 0040337095     PISSN: 00263672     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf01246186     Document Type: Article

References (18)

1. P. A. Ivanov, V. E. Chelnokov, Semicond. Sci. Technol. 1992, 7, 863.
2. A. I. Steck, J. P. Li, IEEE Trans. Electr. Dev. 1992, 39, 64.
3. V. Cimalla, J. Pezoldt, G. Ecke, H. Roßler, G. Eichhorn, J. Physique IV, Coll.C5 1995, Juin, 863.
4. V. Cimalla, K. V. Karagodina, J. Pezoldt, G. Eichhorn, Mat. Sci. Eng. 1995, B29, 170.
5. N. Becourt, J. L. Ponthenier, A. M. Papon, C. Jassaud, Physica 1993, B185, 79.
6. Ch. C. Chiu, S. B. Desu, J. Mat. Res. 1993, 8, 535.
7. S. Nishino, J. A. Powell, H. A. Will, Appl. Phys. Lett. 1983, 42, 460.
8. P. Liaw, R. F. Davis, J. Electrochem. Soc. 1985, 132, 642.
9. K. Kim, S. D. Choi, K. L. Wang, J. Vac. Sci. Technol. 1992, B10, 930.
10. R. Kaplan, J. Appl. Phys. 1984, 56, 1635.
11. P. Morgan, K. I. Seaward, T. W. Barbee, J. Vac. Sci. Technol. 1985, A3, 2108.
12. A. N. Andreev, M. M. Anikin, A. L. Syrkin, V. E. Chelnikov, Semiconductors 1994, 28, 577.
13. S. Hofmann, Surf. Interface Anal. 1994, 21, 673.
14. G. Kupris, H. Rößler, G. Ecke, S. Hofmann, Fresenius J. Anal. Chem. 1995, 353, 307.
15. G. Kupris, Thesis, TU Ilmenau, 1995 (publ. in Berichte aus der Physik, Shaker, Aachen, 1995).
16. J. P. Biersack, S. Berg, C. Nender, Nucl. Instr. Meth. 1991, B59/60, 21.
17. M. Griebentrog, A. Mertens, U. Müller-Jahreis, Wiss. Z. Humboldt Univ. Berlin Math. Nat. Reihe XXXIV1985, 9, 852.
18. J. Pezoldt, B. Stottko, G. Kupris, G. Ecke, Mat. Sci. Eng. 1995, B29, 94.