Characterization of p-in-n ATLAS silicon microstrip detectors fabricated by Hamamatsu Photonics and irradiated with 24 GeV/c protons to 3 × 1014 pcm-2

Nuovo Cimento della Societa Italiana di Fisica A

Volumn 112, Issue 11, 1999, Pages 1245-1251

  Morgan, D ^a   Buttar, C M ^b   Carter, J R ^a   Dawson, I ^b   Hara, K ^c   Harper, R ^b   Iwata, Y ^d   Kohriki, T ^e   Kondo, T ^e   Ohsugi, T ^d   Robinson, D ^a   Shimojima, M ^c   Terada, S ^e   Unno, Y ^e  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d HIROSHIMA UNIVERSITY   (Japan)

^e HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040317075     PISSN: 03693546     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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6. Hamamatsu Photonics, 1126-1 Ichino-cho, Hamamatsu 435, Japan.
7. MORGAN D. et al., Nucl. Instrum. Methods A, 426 (1999) 366.
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9. SPENCER E. et al., IEEE Trans. Nucl. Sci., NS-42 (1995) 796.
10. DEWITT J., Proc. IEEE Nucl. Sci. Symp., San Francisco, CA (1993).