Effect of barrier layer thickness on the performance of thin film transistors on glass substrates

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3014, Issue , 1997, Pages 166-169

  Couillard, J Gregory ^a   Ast, Dieter G ^a   Moore, Chad B ^b   Fehlner, Francis P ^b  

^a Cornell University ^*  (United States)

^b Corning Incorporated ^*  (United States)

Author keywords

Barrier layer; Corning code 1737; Glass substrates; Leakage current; Thin film transistor

Indexed keywords

CRYSTAL IMPURITIES; GLASS; LEAKAGE CURRENTS; LIGHT SOURCES; LIQUID CRYSTAL DISPLAYS; LIQUID CRYSTALS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; SODIUM; SOLIDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

BARRIER LAYER; CORNING CODE 1737; GLASS SUBSTRATES; LEAKAGE CURRENT; THIN FILM TRANSISTOR;

SUBSTRATES;

EID: 0040291860     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.270292     Document Type: Conference Paper

References (2)

1. C. B. Moore, D. M. Trotter, F. P. Fehlner, J. G. Couillard, and D. G. Ast, "Barrier Layers for Poly-Si TFT Displays", Proc. of the 1996 Society for Information Display International Symposium 17, pp. 543-545, 1996.
2. R. J. Araujo and F. P. Fehlner, "Sodium Redistribution Between Oxide Phases", J. Non-Crystalline Solids 197, pp. 154-163, 1996.