Photoluminescence at 1.54 μm in erbium-doped amorphous hydrogenated silicon

Semiconductors

Volumn 30, Issue 5, 1996, Pages 440-443

  Terukov, E I ^a   Kudoyarova, V Kh ^a   Mezdrogina, M M ^a   Golubev, V G ^a   Sturm, A ^b   Fuhs, W ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040201377     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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