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Volumn 9, Issue 7, 1990, Pages 921-929

Selection of organometallics for MOCVD of Hg1-xCdxTe and doped semiconductors

Author keywords

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Indexed keywords


EID: 0040142819     PISSN: 02775387     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0277-5387(00)84292-8     Document Type: Article
Times cited : (23)

References (87)
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    • Growth, and surface and interface characteristics of hetero-epitaxial ZnTe films by metalorganic chemical-vapour-deposition.
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    • Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth
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    • T. McAllister, J. Cryst. Growth, submitted.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.