Modelling and simulating charge sensitive MOS circuits

Mathematical and Computer Modelling of Dynamical Systems

Volumn 2, Issue 1, 1996, Pages 69-81

  Gunther M ^a   Denk, G ^b   Feldmann, U ^c  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c SIEMENS AG   (Germany)

Author keywords

CAD package; Capacitance and charge models; Charge distribution effects; Efficient and reliable integration scheme; Electric circuit simulation; Modelling level; MOS transistor

Indexed keywords

EID: 0040011480     PISSN: 13873954     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

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