SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Volumn 32, Issue 4, 1998, Pages 366-371

Effect of nonuniform distribution of radiation defects in GaAs on the DLTS spectra

(2) Novikov, V A a Peshev, V V a

a Kuznetsov Siberian P (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040005768 PISSN: 10637826 EISSN: None Source Type: Journal
DOI: 10.1134/1.1187397 Document Type: Article

Times cited : (6)

References (17)

1
- 0021517639
- G. M. Martin, E. Estève, P. Langlade, and S. Makram-Ebeid, J. Appl. Phys. 56, 2655 (1984).
- (1984) J. Appl. Phys. , vol.56 , pp. 2655
- Martin, G.M.¹ Estève, E.² Langlade, P.³ Makram-Ebeid, S.⁴

2
- 21544461147
- D. Pons and J. C. Bourgoin, J. Phys. C: Solid State Phys. 18, 3839 (1985).
- (1985) J. Phys. C: Solid State Phys. , vol.18 , pp. 3839
- Pons, D.¹ Bourgoin, J.C.²

3
- 0021788055
- Coronado, California
- R. Magno, M. Spencer, J. G. Giessner, and E. R. Weber, in 13th Int'l. Conf. on Defects in Semiconductors (Coronado, California, 1984), p. 981.
- (1984) 13th Int'l. Conf. on Defects in Semiconductors , pp. 981
- Magno, R.¹ Spencer, M.² Giessner, J.G.³ Weber, E.R.⁴

4
- 0000796230
- V. N. Brudnyǐ, N. G. Kolin, and A. I. Potapov, Fiz. Tekh. Poluprovodn. 27, 260 (1993) [Semiconductors 27, 145 (1993)].
- (1993) Fiz. Tekh. Poluprovodn. , vol.27 , pp. 260
- Brudnyǐ, V.N.¹ Kolin, N.G.² Potapov, A.I.³

5
- 21144469340
- V. N. Brudnyǐ, N. G. Kolin, and A. I. Potapov, Fiz. Tekh. Poluprovodn. 27, 260 (1993) [Semiconductors 27, 145 (1993)].
- (1993) Semiconductors , vol.27 , pp. 145

6
- 24844458006
- V. N. Brudnyǐ and V. V. Peshev, Phys. Status Solidi A 105, K57 (1990).
- (1990) Phys. Status Solidi A , vol.105
- Brudnyǐ, V.N.¹ Peshev, V.V.²

7
- 0039503022
- V. A. Ivanyukovich, V. I. Karas', and V. M. Lomako, Fiz. Tekh. Poluprovodn. 24, 1427 (1990) [Sov. Phys. Semicond. 24, 893 (1990)].
- (1990) Fiz. Tekh. Poluprovodn. , vol.24 , pp. 1427
- Ivanyukovich, V.A.¹ Karas', V.I.² Lomako, V.M.³

8
- 3042929950
- V. A. Ivanyukovich, V. I. Karas', and V. M. Lomako, Fiz. Tekh. Poluprovodn. 24, 1427 (1990) [Sov. Phys. Semicond. 24, 893 (1990)].
- (1990) Sov. Phys. Semicond. , vol.24 , pp. 893

9
- 0029373197
- V. N. Brudnyǐ, S. N. Grinyaev, and V. E. Stepanov, Physica B: Condens. Matter. 212, 429 (1995).
- (1995) Physica B: Condens. Matter. , vol.212 , pp. 429
- Brudnyǐ, V.N.¹ Grinyaev, S.N.² Stepanov, V.E.³

10
- 0004233479
- Mir, Moscow
- D. Lang, in Point Defects in Solids [Russian translation] (Mir, Moscow, 1979), p. 187.
- (1979) Point Defects in Solids [Russian Translation] , pp. 187
- Lang, D.¹

11
- 0012362076
- R. Coates and E. W. J. Mitchell, Adv. Phys. 24, 593 (1975).
- (1975) Adv. Phys. , vol.24 , pp. 593
- Coates, R.¹ Mitchell, E.W.J.²

12
- 0004101812
- Springer-Verlag, New York
- J. C. Bourgoin and M. Lanoo, Point Defects in Semiconductors (Springer-Verlag, New York, 1980).
- (1980) Point Defects in Semiconductors
- Bourgoin, J.C.¹ Lanoo, M.²

13
- 0007064240
- Nauka, Leningrad
- L. S. Berman, Capacitance Methods for Studying Semiconductors [in Russian] (Nauka, Leningrad, 1972).
- (1972) Capacitance Methods for Studying Semiconductors [in Russian]
- Berman, L.S.¹

14
- 36849099660
- J. L. Hartke, J. Appl. Phys. 39, 4871 (1968).
- (1968) J. Appl. Phys. , vol.39 , pp. 4871
- Hartke, J.L.¹

15
- 0000955336
- B. R. Gossick, J. Appl. Phys. 30, 1214 (1959).
- (1959) J. Appl. Phys. , vol.30 , pp. 1214
- Gossick, B.R.¹

16
- 0021385796
- D. Stievenard, J. C. Bourgoin, and M. Lanoo, J. Appl. Phys. 55, 1477 (1984).
- (1984) J. Appl. Phys. , vol.55 , pp. 1477
- Stievenard, D.¹ Bourgoin, J.C.² Lanoo, M.³

17
- 0022024736
- C. E. Barnes, T. E. Zipperian, and L. R. Dawson, J. Electron. Mater. 14, 95 (1985).
- (1985) J. Electron. Mater. , vol.14 , pp. 95
- Barnes, C.E.¹ Zipperian, T.E.² Dawson, L.R.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.