Modeling of hypervalent configurations, valence alternation pairs, deformed structure, and properties of a-S and a-As2S3

Semiconductors

Volumn 32, Issue 8, 1998, Pages 843-849

  Dembovskii S A ^a   Zyubin, A S ^a   Grigor'ev, F V ^a  

^a KURNAKOV INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039992075     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187470     Document Type: Article

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