Artificial neural network prediction of the band gap and melting point of binary and ternary compound semiconductors

Materials Science and Engineering B

Volumn B54, Issue 3, 1998, Pages 149-152

  Zhaochun, Zhang ^a   Ruiwu, Peng ^a   Nianyi, Chen ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Artificial neural network; Band gap; III V, II VI, I III VI2, II IV V2; Melting point

Indexed keywords

ENERGY GAP; MELTING; NEURAL NETWORKS; TERNARY SYSTEMS;

TERNARY COMPOUND SEMICONDUCTORS;

SEMICONDUCTOR MATERIALS;

EID: 0039982411     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(98)00157-3     Document Type: Article

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