Recombination mechanisms in doped n-type Hg1-XCDXTe crystals and properties of diffusion p+-n junctions based on them

Semiconductors

Volumn 31, Issue 3, 1997, Pages 290-293

  Teterkin, V V ^a   Stochanskii S Ya ^a   Sizov, F F ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

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[No Author keywords available]

Indexed keywords

EID: 0039921506     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187130     Document Type: Article

References (23)

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