Influence of the inhomogeneous strain relaxation on the optical properties of etched quantum wires

Physical Review B - Condensed Matter and Materials Physics

Volumn 55, Issue 12, 1997, Pages R7387-R7390

  Niquet, Y ^a   Priester, C ^b  

^a CEA CNRS Joint Group "Microstructures de Semiconducteurs II VI"   (France)

^b Institut Superieur de l'Electronique et du Numerique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039905148     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.R7387     Document Type: Article

References (11)

1. A. Izrael et. al Appl. Phys. Lett. 56, 830 (1990).
2. W. Walecki et. al Appl. Phys. Lett. 57, 2641 (1990).
3. L. De Caro and L. Tapfer, Phys. Rev. B 51, 4381 (1995).
4. P. N. Keating, Phys. Rev. 145, 637 (1966).
5. J. L. Martins and A. Zunger, Phys. Rev. B 30, 637 (1984).
6. M. Illing et. al Appl. Phys. Lett. 67, 124 (1995).
7. M. Haase et. al Appl. Phys. Lett. 59, 1272 (1991).
8. Ch. Gréus et. al Phys. Rev. B 47, 7626 (1993).
9. G. Bir and E. Pikus, Fiz. Tverd. Tela (Leningrad) 1, 154 (1959) [Sov. Phys. Solid State>1, 1502 (1960)].
10. C. Van de Walle, Phys. Rev. B 39, 1871 (1989).
11. Y. S. Tang et. al J. Appl. Phys. 77, 6481 (1995).