Negative interband photoconductivity in Ge/Si heterostructures with quantum dots of the second type

JETP Letters

Volumn 72, Issue 4, 2000, Pages 267-272

  Yakimov, A I ^a   Dvurechenskii A V ^a   Nikiforov, A I ^a   Pchelyakov, O P ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039849457     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1320109     Document Type: Article

References (8)

1. N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 385 (1998) [Semiconductors 32, 343 (1998)].
2. N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 385 (1998) [Semiconductors 32, 343 (1998)].
3. A. V. Dvurechenskiǐ and A. I. Yakimov, Izv. Vyssh. Uchebn. Zaved., Mater. Élektron. Tekh. 4, 4 (1999).
4. A. I. Yakimov, A. V. Dvurechenskiǐ, N. P. Stepina, et al., Zh. Éksp. Teor. Fiz. (in press) [JETP (in press)].
5. A. I. Yakimov, A. V. Dvurechenskiǐ, N. P. Stepina, et al., Zh. Éksp. Teor. Fiz. (in press) [JETP (in press)].
6. A. I. Yakimov, A. V. Dvurechenskii, Yu. Yu. Proskuryakov, et al., Appl. Phys. Lett. 75, 1413 (1999).
7. J. A. del Alamo, in Properties of Silicon, Ed. by T. H. Ning (INSPEC, Institute of Electrical Engineers, New York, 1988), p. 164.
8. V. L. Bonch-Bruevich and S. G. Kalashnikov, Physics of Semiconductors (Nauka, Moscow, 1977).