Synthetic moissanite: A new man-made jewel

Current Science

Volumn 79, Issue 11, 2000, Pages 1572-1577

  Nassau, Kurt ^a  

^a NONE   (United States)

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[No Author keywords available]

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EID: 0039842128     PISSN: 00113891     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (21)

1. Nassau, K., Gem Made by Man, Gemmological Institute of America, Santa Monica, CA, 1980, p. 4, 166-167; 252-253; 343.
2. Acheson, E. G., US Patent 492, 767, 28 February 1893.
3. Harrow, B., Eminent Chemists of Our Time, D. Van Nostrand Co., New York, 1920, pp. 135-154.
4. Moissan, F. F. H. C.R. Acad. Sci., Paris, 1893b 116, 288; ibid, 1904, 139 773.
5. Moissan, F. F. H. C.R. Acad. Sci., Paris, 1893b 116, 288; ibid, 1904, 139 773.
6. Davis, R. F., Carter, C. H. and Hunter, C. E., U.S. Patent Re. 34,861, 14 February 1995. Reissue of U.S. Patent 4,866,005, 18 September 1989, 1990.
7. Carter, C. H., Tsvetkov, V. H. and Glass, R. C., U.S. Patent 5,718,760, 17 February 1998.
8. O'Connor, J. R. and Smiltens, J., Proceedings of the Conference on Silicon Carbide, Boston, MA, 2-3 April 1959, Pergamon Press, New York, 1960.
9. Nakashima, S., Matsunami, M., Yoshida, S. and Harima, H. Proceedings of the Sixth International Conference, 18-21 September 1995, Kyoto, Japan. Conference Series No. 142, Institute of Physics Publishing, Philadelphia, 1995.
10. Nassau, K., McClure, S. F., Elen, S. and Shigley, J. E. Synthetic Moissanite: A New Diamond Substitute. Gems Gemol., 1997, 33, 260-275.
11. Nassau, K., J. Gemmol., 1999, 26 485-438.
12. Verma, A. R. and Krishna, P., Polymorphism and Polytypism in Crystals, John Wiley and Sons, New York, 1966, pp. 81-113; 234-241, etc.
13. Divakar, R., Chia, K. Y., Kunz, S. M. and Lau, S. K., Kirk-Othmer Encyclopedia of Chemical Technology (ed. Howe-Grant, M.), John Wiley and Sons, New York, 1993, 3rd edn., vol. 4, pp. 891-911.
14. Smoak, R. H., Korzekwa, T. M., Kunz, S. M. and Howell, E. D., in Kirk-Othmer Encyclopedia of Chemical Technology, (ed. Eckroth, D.), John Wiley and Sons, New York, 1978, 3rd edn., vol. 4, pp. 520-535.
15. Von Muench, W., in Landolt-Boernstein Numerical Data and Functional Relationships in Science and Technology (ed. Madelung, O.), Springer-Verlag, New York, New Series, Group III, 1982, vol. 17a, pp. 132-142; 442-449.
16. Von Muench, W., in Landolt-Boernstein Numerical Data and Functional Relationships in Science and Technology, (eds Schultz, M. and Weiss, H.), Springer-Verlag, New York, New Series, Group III, 1984, vol. 17c, pp. 403-416; 585-592.
17. Wilke, K.-Th., Kristall Zuechtung. Verlag Harri Deutsch, Thun, Frankfurt, 1988, p. 492; 494-499; 999; 1011.
18. Lely, J. A., Darstellung von Einkristallen von Silicium-carbid nd Beherrschung von Art und Menge der eingebauten Verunreinigungen. Berichte der Deutschen Keramischen Gesellschaft, 1955, vol. 32, pp. 229-231.
19. Tairov, Yu. M. and Tsvetkov, V. F., J. Cryst. Growth, 1981, 52, 146-150.
20. Tsvetkov, V. F., Allen, S. T., Kong, H. S., Carter and C. H. Jr., Recent Progress in SiC Crystal Growth, in Nakashima et al., 1996.
21. Kellam, M., Gems Gemol., 1999, 35, 80-81.