Electronic properties of nanocrystalline BN and AlN films deposited on Si and GaAs - A comparison

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 391-397

  Szmidt, J ^a   Sokolowska A ^a   Olszyna, A ^a   Werbowy, A ^a   Pawlowski P ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Electrical properties; Heterojunctions; Nitrides

Indexed keywords

ALUMINUM COMPOUNDS; BORON COMPOUNDS; DIELECTRIC FILMS; ELECTRONIC PROPERTIES; NANOSTRUCTURED MATERIALS; NITRIDES; QUANTUM EFFICIENCY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPUTTER DEPOSITION;

ALUMINUM NITRIDE; BORON NITRIDE;

PROTECTIVE COATINGS;

EID: 0039776405     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00376-8     Document Type: Article

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