Mid-infrared lasers fabricated from III-V compound semiconductors

Current Opinion in Solid State and Materials Science

Volumn 1, Issue 2, 1996, Pages 212-217

  Choi, Hong K ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039628946     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-0286(96)80086-6     Document Type: Article

References (27)

1. 0 Appl Phys Lett 1992, 61:1154-1156.
2. Choi HK, Eglash SJ: Room-temperature CW operation of GaInAsSb/ AlGaAsSb diode lasers emitting at 2.2 μm. Appl Phys Lett 1991, 59:1165-1166.
3. 2 near room temperature.
4. Choi HK, Turner GW, Connors MK, Fox S, Dauga C, Dagenais M: High-power, high-temperature operation of GaInAsSb/AlGaAsSb ridge-waveguide lasers emitting at 1.9 μm. IEEE Photon Technol Lett 1995, 7:281-283. This paper reports on ridge-waveguide lasers with cw power of 100mW at room temperature and cw operation up to 130°C.
5. Lee H, York PK, Menna RJ, Martinelli RU, Garbuzov DZ, Narayan SY, Connolly JC: Room-temperature 2.78 μm InGaAsSb/AlGaAsSb quantum-well lasers. Appl Phys Lett 1995, 66:1942-1944. This paper reports on pulsed operation up to 60°C with emission at 2.78 μm.
6. Garbuzov DZ, Martinelli RU, Menna RJ, York PK, Lee H, Narayan SY, Connolly JC: 2.7-μm InGaAsSb/AlGaAsSb laser diodes with continuous-wave operation up to -39°C. Appl Phys Lett 1995, 67:1346-1348. This paper reports cw operation at 2.7 μm up to 234 K, and discusses possible mechanisms for the degradation of differential quantum efficiency with increasing temperature.
7. Martinelli RU, Garbuzov DZ, Lee H, York PK, Menna RJ, Connolly JC, Narayan SY: InGaAsSb/AlGaAsSb mid-Infrared diode lasers for gas sensing. In Proceeding of the Society of Photo-Optical Instrumentation Engineers (SPIE) 1995, vol 2382. Washington DC: SPIE; 1995:250-261
8. Kurtz SR, Biefeld RM, Dawson LR, Baucom KC, Howard AJ: Midwave (4 μm) infrared lasers and light-emitting diodes wtth compressed InAsSb active regions. Appl Phys Lett 1994, 64:812-814.
9. Choi HK, Turner GW, Le HQ: InAsSb/InAlAs strained quantum-well lasers emitting at 4.5 μm. Appl Phys Lett 1995, 66:3543-3545.
10. Choi HK, Turner GW: InAsSb/InAlAsSb strained quantumwell diode lasers emitting at 3.9 μm. Appl Phys Lett 1995, 67:332-334. This paper reports on pulsed operation up to 165 K and cw operation up to 128 K with emission at 3.9 μm. The maximum cw power at 80K is 30mW per facet.
11. Choi HK, Turner GW, Liau ZL: 3.9-μm InAsSb/AlAsSb Double-heterostructure lasers with high power and improved temperature characteristics. Appl Phys Lett 1994, 65:2251-2253.
12. Onabe K: Immiscibility analysis for III-V quarternary solid solutions. NEC Res Dev 1984, 72:1-11.
13. Hasenberg TC, Chow DH, Kost AR, Miles RH, West L: Demonstration of 3.5 μm GalnSb/InAs superlattice diode laser. Electron Lett 1995, 31:275-276. This paper reports the first diode laser operation from GaInSb/InAs type-II structures. Emitting at 3.5 μm, the lasers operated pulsed up to 160 K.
14. Miles RH, Chow DH, Zhang YH, Brewer PO, Wilson RG: Midwave Infrared stimulated emission from a GaInSb/InAs superlattice. Appl Phys Lett 1995, 66:1921-1923. This paper reports pulsed operation up to 40K under optical pumping from GaInSb/InAs type-11 structures. It describes the issue of crystal growth by molecular beam epitaxy.
15. •] but contains more discussions on the design and more experimental data.
16. Grain CH, Young PM, Ehrenreich H: Theoretical performance of InAs/InGaSb superlattice-based midwave Infrared lasers. J Appl Phys 1994, 76:1940-1942.
17. x type-II superlattice midwave Infrared lasers grown on InAs substrates. IEEE J Sel Top Quantum Electron 1995, 1:749-756. This paper describes theoretical modelling and experimental data on InAsSb/InAs type-II lasers. Continuous-wave operation up to 95 K was obtained by optical pumping.
18. x midinfrared lasers. Appl Phys Lett 1995, 66:118-120.
19. Moiseev KD, Mikhailova MP, Ershov OG, Yakovtev YP: Long-wavelength laser (3.26 μm) with a single Isolated p-GaInAsSb/p-InAs type-II heterejunction in the active region. Tech Phys Lett 1995, 21:482-483.
20. Le HQ, Turner GW, Eglash SJ, Choi HK, Coppeta DA: High-power diode-laser-pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4μm. Appl Phys Lett 1994, 64:152-154.
21. Le HQ, Turner GW, Choi HK, Ochoa JR, Sanchez A, Arias JM, Zandian M, Zucca RR, Liu YZ: High-power diode-pumped mid-infrared semiconductor lasers. In Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE) 1995, vol 2382. Washington DC: SPIE; 1995:262-270. This paper reports the high-power operation of InAsSb/AlAsSb doubte-heterostructure lasers under optical pumping. Peak pulsed power up to 2.7 W and average power up to 470mW have been obtained.
22. Le HQ, Turner GW, Ochoa JR, Sanchez A: High-efficiency, high-temperature mid-infrared (λ ≥ 4 μm) GaInAsSb/GaSb Lasers. Electron Lett 1994, 30:1944-1945. This paper describes the effect of pumping wavelength on the conversion efficiency of 4 μm lasers. A differential efficiency of up to 12% is obtained by 2.1 μm pumping, whilst it is 5% with 1.6 μm pumping.
23. Faist J, Capasso F, Sirtori C, Sivco DL, Hutchinson AL, Chu SNG, Cho AY: Quantum cascade laser. Science 1994, 264:553-556.
24. 0 operation. Appl Phys Lett 1995, 65:2901-2903. This paper discusses the design issues and temperature dependence of quantum cascade lasers with diagonal design. Pulsed operation up to 125 K is obtained at 4.3 μm.
25. Faist J, Capasso F, Sirtori C, Sivco DL, Hutchinson AL, Cho AY: Vertical transition quantum cascade laser with Bragg confined excited state. Appl Phys Lett 1995, 66:538-540. This paper describes the design idea behind the vertical transition quantum cascade laser. Pulsed operation up to 100K is obtained at 4.5 μm.
26. Faist J, Capasso F, Sirtori C, Sivco DL, Hutchinson AL, Cho AY: Continuous wave operation of a vertical transition quantum cascade laser above T = 80 K. Appl Phys Lett 1995, 67:3057-3059. This paper reports the first cw operation from the quantum cascade lasers.
27. Sirtori C, Faist J, Capasso F, Sivco DL, Hutchinson AL, Cho AY: Quantum cascade laser with plasmon-enhanced waveguide operating at 8.4 μm wavelength. Appl Phys Lett 1995, 66:3242-3244. This paper reports the first laser operation of quantum cascade lasers at ≈ 8 μm. It discusses the design issues for 8 μm lasers.