Application of deep level transient spectroscopy for investigation of the parameters of SIC-based p-n structures

Semiconductors

Volumn 30, Issue 6, 1996, Pages 531-534

  Lebedev, A A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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[No Author keywords available]

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EID: 0039609890     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)

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