Heat sources and temperature distribution in insulated gate bipolar transistors

International Journal of Numerical Methods for Heat & Fluid Flow

Volumn 2, Issue 4, 1992, Pages 291-298

  Board, K ^a   Mawby, P A ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039574418     PISSN: 09615539     EISSN: None     Source Type: Journal    
DOI: 10.1108/eb017496     Document Type: Review

References (6)

1. Baliga, B. J. The insulated-gate rectifier in a new powér switching device, IEDM Tech. Dig., pp. 264–267 (1982)
2. Russel, V. J. P. The COMFET—a new high-conductance MOS-gated device, IEEE Electron. Dev. Lett., EDL-4, 63–65 (1983)
3. Darwish, M. and Board, K. Lateral resurfed COMFET, Electron. Lett., 20, 519–520 (1984)
4. Wachutka, G. Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modelling, Simulation of Semiconductor Devices and Processes, Vol. 3, pp. 83–96, Alma Mater Studorium, Bologna (1988)
5. Adler, M. S. Accurate calculations of the forward drop and power dissipation in thyristors, Proc. IEEE Trans. Electron Dev., ED-25, 16–22 (1978)
6. Gaur, P. and Navon, D. H. Empirical law for the temperature dependence of the thermal conductivity of silicon, IEEE Trans. Electron Dev., ED-23, 50–57 (1976)