Low-energy nitrogen-ion doping into GaAs and its optical properties

Materials Science and Engineering: A

Volumn 253, Issue 1-2, 1998, Pages 301-305

  Shima, Takayuki ^a,b   Makita, Yunosuke ^a   Kimura, Shinji ^a   Sanpei, Hirokazu ^a,c   Sandhu, Adarsh ^c  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b Advanced Mobile Systems   (Japan)

^c TOKAI UNIVERSITY   (Japan)

Author keywords

GaAs; Isoelectronic impurity; Low energy ion beam; Molecular beam epitaxy; Nitrogen; Photoluminesence

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; NITROGEN; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

ION BEAM EPITAXY; ISOELECTRONIC IMPURITY; LOW ENERGY ION BEAM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0039527001     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5093(98)00740-0     Document Type: Article

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