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Journal of Applied Physics
Volumn 71, Issue 12, 1992, Pages 5981-5984
Mechanisms for GaAs surface passivation by a molecular beam epitaxial cap layer grown at 200°C
(5)
Look, D C
a
Walters, D C
a
Stutz, C E
b
Evans, K R
b
Sizelove, J R
b
a
WRIGHT STATE UNIVERSITY
(
United States
)
b
AIR FORCE RESEARCH LABORATORY
(
United States
)
Author keywords
[No Author keywords available]
Indexed keywords
EID
:
0039469134
PISSN
:
00218979
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1063/1.350450
Document Type
:
Article
Times cited : (
9
)
References (
20
)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
