Far-infrared hole absorption in InxGa1-xAs/GaAs MQW heterostructures with δ-doped barriers

Physica Status Solidi (B) Basic Research

Volumn 204, Issue 1, 1997, Pages 174-177

  Shastin, V N ^a   Pavlov, S G ^a   Muravjov, A V ^a   Orlova, E E ^a   Zhukavin, R Kh ^a   Zvonkov, B N ^b  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039464567     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(199711)204:1<174::AID-PSSB174>3.0.CO;2-V     Document Type: Article

References (2)

1. V. SHASTIN, Opt. Quantum Electronics 23, 111 (1991).
2. V. ALESHKIN et al., Proc. 23th Internat. Symp. Compound Semiconductors, St. Petersburg (Russia), September 23 to 27, 1996 (p. 149).