The properties of MOCVD ZrO2 films obtained by the interaction of zirconium pivalyltrifluoroacetonate with oxygen

Russian Microelectronics

Volumn 27, Issue 3, 1998, Pages 174-178

  Erkov, V G ^a   Devyatova, S F ^a   Karataeva, N D ^a   Molodtsova, E L ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

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[No Author keywords available]

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EID: 0039447541     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

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