Luminescence properties of gallium nitride layers grown on silicon carbide substrates by gas-phase epitaxy in a chloride system

Semiconductors

Volumn 31, Issue 5, 1997, Pages 523-526

  Zubrilov, A S ^a   Mel'nik, Yu V ^a   Tsvetkov, D V ^a   Bugrov, V E ^a   Nikolaev, A E ^a   Stepanov, S I ^a   Dmitriev, V A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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EID: 0039415171     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187206     Document Type: Article

References (13)

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