Experimental measurements of the thickness dependence of the IR reflectance from Al quantum wells

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 235, Issue 6, 1997, Pages 629-633

  Villagomez R ^a,c   Keller, O ^a   Pudonin, F ^b  

^a AALBORG UNIVERSITY   (Denmark)

^b LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^c CENTRO DE INVESTIGACIÓN CIENTÍFICA Y DE EDUCACIÓN SUPERIOR DE ENSENADA   (Mexico)

Author keywords

Quantum wells; Thin films; Ultrathin films

Indexed keywords

ALUMINUM; MONOLAYERS; REFLECTION; SEMICONDUCTOR QUANTUM WELLS; SILICA; TEMPERATURE MEASUREMENT; THIN FILMS; ULTRATHIN FILMS;

MEASUREMENTS OF; P-POLARIZED; SI SUBSTRATES; SPATIAL PERIODS; THICKNESS DEPENDENCE;

SILICON;

EID: 0039375266     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9601(97)00692-0     Document Type: Article

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