Passivation of a GaAs surface by treatment in phosphine vapor

Semiconductors

Volumn 30, Issue 2, 1996, Pages 132-135

  Bednyi B I ^a   Baidus' N V ^a  

^a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039335663     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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