Reaction of palladium thin films with an Si-rich 6H-SiC(0001)(3×3) surface

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 352-356

  Veuillen, J Y ^a   Nguyen Tan, T A ^a   Tsiaoussis, I ^b   Frangis, N ^b   Brunel, M ^a   Gunnella, R ^c  

^a LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c UNIVERSITY OF CAMERINO   (Italy)

Author keywords

6H SiC(0001); Interface formation; Palladium; Thin films

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; DEPOSITION; EVAPORATION; INTERFACES (MATERIALS); MONOLAYERS; PALLADIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMAL EFFECTS; THIN FILMS; VACUUM APPLICATIONS;

ENERGY SHIFT;

METALLIC FILMS;

EID: 0039184020     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00433-6     Document Type: Review

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