Size effects in fluctuation spectra of many-valley semiconductors

Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 24, 1998, Pages 15465-15475

  Kochelap, V ^a   Sokolov, V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

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Indexed keywords

EID: 0039178438     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.15465     Document Type: Article

References (55)

1. P. J. Price, in Fluctuation Phenomena in Solids, edited by R. E. Burgess (Academic Press, New York, 1965), Chap. 8.
2. M. Lax, Rev. Mod. Phys. 18, 541 (1966).
3. S. V. Gantsevich, V. L. Gurevich, and R. Katilius, Zh. Éksp. Teor. Fiz. 57, 503 (1969) [Sov. Phys. JETP 30, 276 (1970)];
4. S. V. GantsevichV. L. GurevichR. KatiliusRiv. Nuovo Cimento 2, 1 (1979).
5. Sh. M. Kogan and A. Ya. Shul’man, Zh. Éksp. Teor. Fiz. 56, 862 (1969) [Sov. Phys. JETP 29, 467 (1969)];
6. Sov. Phys. JETPA. Ya. Shul’man and Sh. M. Kogan, ibid. 57, 2112 (1969) [ 30, 1146 (1970)].
7. K. M. van Vliet, J. Math. Phys. 12, 1981 (1971).
8. J. Math. Phys.K. M. van Vliet12, 1998 (1971).
9. V. A. Kochelap and N. A. Zakhleniuk, Phys. Rev. B 50, 8325 (1994).
10. C. M. van Vliet, IEEE Trans. Electron Devices 41, 1902 (1994).
11. IEEE Trans. Electron DevicesJ. P. Nougier, 41, 2034 (1994).
12. V. Bareikis, J. Liberis, I. Matulioniene, A. Matulionis, and P. Sakalas, IEEE Trans. Electron Devices 41, 2050 (1994).
13. P. J. Price, J. Appl. Phys. 31, 949 (1960).
14. A. A. Grinberg, Fiz. Tekh. Poluprovodn. 3, 1073 (1969) [Sov. Phys. Semicond. 3, 903 (1969)].
15. L. G. Hart, Can. J. Phys. 48, 531 (1970).
16. Solid-State Electron. 31, 171(1988).
17. Physica, B&C 147, 297(1988).
18. P. M. Tomchuk and A. A. Chumak, Fiz. Tverd. Tela 14, 2347 (1972) [Sov. Phys. Solid State 14, 2031 (1973)].
19. A. A. Tarasenko, P. M. Tomchuk, and A. A. Chumak, in Fluctuations in Volume and on Surface of Solids, edited by A. M. Fedorchenko (Naukova Dumka Publishers, Kiev, 1992), Chap. 2.
20. C. J. Stanton and J. W. Wilkins, Phys. Rev. B 36, 1686 (1987).
21. D. Y. Xing, M. Liu, P. Hu, and C. S. Ting, J. Phys. C 21, 2881 (1988).
22. N. A. Zakhleniuk, V. A. Kochelap, and V. V. Mitin, Zh. Éksp. Teor. Fiz. 95, 1495 (1989) [Sov. Phys. JETP 68, 863 (1989)].
23. S. Asmontas, J. Liberis, L. Subacius, and G. Valusis, Semicond. Sci. Technol. 7, B331 (1992).
24. B. R. Nag, S. R. Ahmed, and M. Deb Roy, Appl. Phys. A: Solids Surf. 41, 197 (1986).
25. O. M. Bulashenko, O. V. Kochelap, and V. A. Kochelap, Solid-State Electron. 36, 111 (1993).
26. O. M. BulashenkoO. V. KochelapV. A. KochelapPhys. Rev. B 45, 14 308 (1993).
27. M. Bulashenko and V. A. Kochelap, J. Phys.: Condens. Matter 5, L469 (1993).
28. V. A. Kochelap, V. N. Sokolov, and N. A. Zakhleniuk, Pis’ma Zh. Éksp. Teor. Fiz. 55, 233 (1992) [JETP Lett. 55, 228 (1992)];
29. V. A. KochelapV. N. SokolovN. A. ZakhleniukPhys. Rev. B 48, 2304 (1993).
30. V. A. KochelapV. N. SokolovN. A. ZakhleniukSemicond. Sci. Technol. 9, S588 (1994).
31. I. O. Kulik and A. N. Omel’yanchuk, Fiz. Nizk. Temp. 10, 305 (1984) [Sov. J. Low Temp. Phys. 10, 158 (1984)];
32. G. B. Lesovik, Pis’ma Zh. Éksp. Teor. Fiz. 49, 513 (1989) [JETP Lett. 49, 592 (1989)];
33. M. Büttiker, Phys. Rev. Lett. 65, 2901 (1990).
34. M. BüttikerPhysica B 175, 199 (1991).
35. Physica BR. Landauer and Th. Martin, 175, 167 (1991).
36. C. W. J. Beenakker and H. van Houten, Phys. Rev. B 43, 12 066 (1991).
37. C. W. J. Beenakker and M. Büttiker, Phys. Rev. B 46, 1889 (1992).
38. K. E. Nagaev, Phys. Lett. A 169, 103 (1992).
39. Ya. M. Blanter and M. Büttiker, Phys. Rev. B 56, 2127 (1997).
40. E. Kasper, in Semiconductor Interfaces at the Sub-Nanometer Scale, edited by H. W. M. Salemink and M. D. Pashley, Vol. 243 of NATO Advanced Study Institute Series E: Applied Sciences (Kluwer Academic Publishers, Boston, 1993), p. 161.
41. M. Wilander, in Heterojunction Transistors and Small Size Effects in Devices (Studentliteraturer, Chartwell-Bratt Linkoping, 1992).
42. Z. S. Gribnikov, V. A. Kochelap, and E. I. Rashba, Zh. Éksp. Teor. Fiz. 51, 266 (1966) [Sov. Phys. JETP 24, 178 (1967)];
43. E. I. Rashba, Z. S. Gribnikov, and V. Ya. Kravchenko, Usp. Fiz. Nauk 119, 1 (1976) [Sov. Phys. Usp. 19, 361 (1976)].
44. J. E. Aubrey, Semicond. Sci. Technol. 3, 902 (1988).
45. V. I. Okulov and V. V. Ustinov, Fiz. Nizk. Temp. 5, 213 (1979); L. A. Fal’kovskiy, Poverhnost’. No. 7, 13 (1982).
46. V. A. Gasparov, Adv. Phys. 42, 393 (1993).
47. L. E. Gurevich and B. I. Shapiro, Zh. Éksp. Teor. Fiz. 55, 1766 (1968) [Sov. Phys. JETP 28, 931 (1967)].
48. The diffusion limited noise with spectral density being proportional to (Formula presented) has been found in earlier papers for (Formula presented)-(Formula presented) noise when surface effects or an inhomogeneous excitation are important: K. M. van Vliet, Solid-State Electron. 13, 649 (1970).
49. F. M. Klaassen, K. M. van Vliet, and J. R. Fassett, J. Phys. Chem. Solids 22, 391 (1961).
50. K. M. van Vliet and H. Menta, Phys. Status Solidi B 106, 11 (1981).
51. Phys. Status Solidi BP. R. Herczfeld and M. J. Fisher, 24, 237 (1974). Notice that the (Formula presented) dependence of the noise spectral density is limited on the side of high frequencies by the conditions of validity of the basic equations that include hydrodynamical and quasiclassical approximations: (Formula presented).
52. B. Sh. Beridze, A. I. Klimovskaya, N. A. Prima, and O. V. Snitko, Fiz. Tekh. Poluprovodn. 19, 987 (1985) [Sov. Phys. Semicond. 19, 607 (1985)];
53. Sov. Phys. Semicond.N. A. Prima, ibid. 20, 314 (1986) [20, 195(1986)];
54. Sov. Phys. Semicond.N. N. Grigor’ev, I. P. Zhad’ko, V. A. Romanov, B. K. Serdega, and L. I. Shekhovtsov, ibid.19, 642 (1985) [ 19, 396 (1985)].
55. L. Reggiani and V. Mitin, Riv. Nuovo Cimento 12, 1 (1989).