Novel approach to simulation of the silylation bake in the DESIRE process

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 313-316

  Weiss M ^a   Goethals, M ^b  

^a FRAUNHOFER INSTITUTE FOR SILICON TECHNOLOGY ISIT   (Germany)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; COMPUTER SIMULATION; CROSSLINKING; DIFFUSION; MATHEMATICAL MODELS; MICROELECTRONIC PROCESSING; OXIDATION; SCANNING ELECTRON MICROSCOPY;

PHOTOACTIVE COMPOUND; REACTION DOMINATED PROPAGATION MODEL; RESIST CALIBRATION; SYLATION BAKE;

PHOTORESISTS;

EID: 0038971765     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00253-7     Document Type: Article

References (2)

1. R.-J. Visser, J. P. W. Schellekens, M. E. Reuhman-Huisken, L. J. Van Ijzendoorn; "Mechanism and kinetics of silylation of resist layers from the gas phase"; SPIE Vol. 771 (1987) 111
2. B. E. Deal and A. S. Grove ; "General relationship for the thermal oxidation of silicon"; J. Appl. Phys, vol.36,No.12, (1965) page 3770