Time structure of charge signals and noise studies of GaAs detectors irradiated by neutrons and protons

Nuovo Cimento della Societa Italiana di Fisica A

Volumn 109, Issue 9, 1996, Pages 1289-1302

  Braunschweig, W ^a   Chu, Z H ^a   Karpinski, W ^a   Kubicki, Th ^a   Lubelsmeyer K ^a   Rente, C ^a   Syben, O ^a   Tenbusch, F ^a   Toporowsky, M ^a   Wittmer, B ^a   Xiao, W J ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038969768     PISSN: 03693546     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02773515     Document Type: Article

References (10)

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5. American Xtal Technology SI GaAs wafer product, 6780 Sierra Court, Dublin, California 94568.
6. Freiberger Elektronikwerkstoffe GmbH product, 09584 Freiberg/Saxony, Germany.
7. EDWARDS M. et al., The radiation hardness test facility at RAL, in Proceedings of Large Hadron Collider Workshop, Aachen, Germany, 4-9 October 1990, CERN 90-10, Vol. III, p. 584.
8. VAN DER ZIEL A., Noise Sources, Characterization, Measurements, Prentice-Hall Information and System Science Series (Prentice-Hall, Inc., New Jersey) 1970.
9. LÜBELSMEYER K et al., Nucl. Instrum. Methods A, 350 (1994) 530.
10. KUBICKI TH., Aufbau einer Koinzidenzanordnung zur Messung der Ladungsausbeute von GaAs-Dioden, RWTH Aachen internal report, PITHA 93/17.