Technological picture of the Planck-scale universe

Nuovo Cimento della Societa Italiana di Fisica B

Volumn 112, Issue 8, 1997, Pages 1191-1192

  Rosu, H ^a,b  

^a IFUG   (Mexico)

^b IGSS   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038871482     PISSN: 03693554     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. ROSU H. C. and SOCORRO J., Phys. Lett. A, 223 (1996) 28; gr-qc/9610018.
2. PAPPADEMOS J., SUKHATME U. and PAGNAMENTA A., Phys. Rev. A, 48 (1993) 3525. Electronic bound states in the continuum have been reported in semiconductor heterostructures grown by molecular-beam epitaxy by CAPASSO F. et al., Nature, 358 (1992) 565.
3. PAPPADEMOS J., SUKHATME U. and PAGNAMENTA A., Phys. Rev. A, 48 (1993) 3525. Electronic bound states in the continuum have been reported in semiconductor heterostructures grown by molecular-beam epitaxy by CAPASSO F. et al., Nature, 358 (1992) 565.
4. ROSU H. C. and SOCORRO J., gr-qc/9611039.
5. POLCHINSKI J., Rev. Mod. Phys., 68 (1996) 1245.
6. SEE, e.g., Popov I. Yu. and POPOVA S. L., Phys. Lett. A, 173 (1993) 484.
7. LENT C. S. and KIRKNER D. J., J. Appl. Phys., 67 (1990) 6353. For an excellent review on boundary conditions in microelectronics see, FRENSLEY W. R., Rev. Mod. Phys., 62 (1990) 745.
8. LENT C. S. and KIRKNER D. J., J. Appl. Phys., 67 (1990) 6353. For an excellent review on boundary conditions in microelectronics see, FRENSLEY W. R., Rev. Mod. Phys., 62 (1990) 745.