Diffusion-limited hydrogen evolution and the density of dangling bonds in high-temperature-annealed hydrogenated amorphous silicon

Journal of Non-Crystalline Solids

Volumn 195, Issue 1-2, 1996, Pages 76-82

  Zhou, Jiang Huai ^a   Kumeda, Minoru ^a   Shimizu, Tatsuo ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038869423     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00523-4     Document Type: Article

References (20)

1. We are interested here only in high-quality a-Si:H films which normally are grown at temperatures between 200 and 300°C.
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