Evidence of concentration fluctuations in disordered network-forming systems: The case of GeSe4 and SiSe4

Journal of Physics Condensed Matter

Volumn 15, Issue 16, 2003, Pages

  Massobrio, Carlo ^a   Celino, Massimo ^b,c   Pasquarello, Alfredo ^d,e  

^a INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

^b Ente per le Nuove Tecn l'Energia   (Italy)

^c INFM   (Italy)

^d EPFL   (Switzerland)

^e INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPOSITION; COMPUTER SIMULATION; ELECTRONIC STRUCTURE; GLASS; LIQUIDS; MOLECULAR DYNAMICS; SILICON COMPOUNDS; STOICHIOMETRY;

DISORDERED NETWORK-FORMING SYSTEM; FIRST SHARP DIFFRACTION PEAK; FIRST-PRINCIPLES MOLECULAR DYNAMICS SIMULATION; SHORT-RANGE CHEMICAL ORDER;

GERMANIUM COMPOUNDS;

EID: 0038814292     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/15/16/303     Document Type: Article

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