Constant temperature control of a device under test (DUT) - Part 1

American Society of Mechanical Engineers, EEP

Volumn 19, Issue 2, 1997, Pages 2031-2036

  Tustaniwskyj, Jerry I ^a   Babcock, James W ^a  

^a Unisys   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038780210     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

1. Gaensslen, F. H., Rideout, V. L., Walker, E. J., and Walker, J. J., 1977, " Very Small MOSFET's for Low Temperature Operation", IEEE Transactions on Electron Devices, Vol. Ed.-24, pp. 1519-1529.
2. Gardell, D. L., 1995, "Temperature Control During High-Power Wafer Test", Advances in Electronic Packaging, Proceedings of the International Packaging Conference - INTERpack '95, T. R. Hsu et. al, ed., ASME, New York, Vol. 1, pp. 67-72.
3. Mead, C. and Conway, L., 1980, Introduction to VLSI systems, Addison-Wesley, Reading, Mass., pg. 34.
4. Roper, S., "New T/R Module Burn-in Method", 1994, Proceedings of the IEEE Systems Readiness Technology Conference - AUTOTESTCON '94, IEEE, New York, pp. 673-679.
5. Tewksbury, S. K., 1981, "N-channel Enhancement-Mode MOSFET Characteristics from 10 to 300° K", IEEE Transactions on Electron Devices, Vol. Ed.-24, pp. 218-229.