ESR characterization of activation of implanted phosphorus ions in silicon carbide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 965-968

  Isoya, J ^a   Ohshima, T ^b   Ohi, A ^b   Morishita, N ^b   Itoh, H ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

ESR; Ion implantation; SiC

Indexed keywords

ANNEALING; CHEMICAL ACTIVATION; ION IMPLANTATION; PARAMAGNETIC RESONANCE; PHOSPHORUS;

IMPLANTED LAYERS;

SILICON CARBIDE;

EID: 0038750829     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00903-0     Document Type: Conference Paper

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