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Volumn 13, Issue 1, 1974, Pages 126-155

Surfons and the electron mobility in silicon inversion layers

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Indexed keywords


EID: 0038720780     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.13.126     Document Type: Article
Times cited : (88)

References (29)
  • 1
    • 84911816488 scopus 로고
    • Cambridge, Mass (United States Atomic Energy Commission, Springfield, N. Y
    • F. Stern: Proc. 10th Int. Conf. on the Physics of Semicond., Cambridge, Mass (United States Atomic Energy Commission, Springfield, N. Y., 1970) p. 451
    • (1970) Proc. 10Th Int. Conf. On the Physics of Semicond , pp. 451
    • Stern, F.1
  • 5
    • 0000142320 scopus 로고
    • Proc. 8th Int. Conf. on the Physics of Semicond. Kyoto, 1966, J. Phys. Soc. Japan 21 (1966) Suppl. p. 336
    • A. B. Fowler, F. F. Fang, W. E. Howard and P. J. Stiles: Phys. Rev. Letters 16 (1966) 901; Proc. 8th Int. Conf. on the Physics of Semicond. Kyoto, 1966, J. Phys. Soc. Japan 21 (1966) Suppl. p. 336.
    • (1966) Phys. Rev. Letters , vol.16 , pp. 901
    • Fowler, A.B.1    Fang, F.F.2    Howard, W.E.3    Stiles, P.J.4
  • 17
  • 18
    • 84956317735 scopus 로고    scopus 로고
    • Preparation
    • H. Maeda: in preparation.
    • Maeda, H.1
  • 28
    • 0001023655 scopus 로고
    • D. Long: Phys. Rev. 120 (1960) 2024.
    • (1960) Phys. Rev , vol.120 , pp. 2024
    • Long, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.