An InGaP-GaAs HBT MMIC smart power amplifier for W-CDMA mobile handsets

IEEE Journal of Solid-State Circuits

Volumn 38, Issue 6, 2003, Pages 905-910

  Kim, Joon Hyung ^a   Kim, Ji Hoon ^a   Noh, Youn Sub ^a   Park, Chul Soon ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Heterojunction bipolar transistor (HBT); Linearization techniques; Monolithic microwave integrated circuit (MMIC); Parallel architecture; Power amplifiers; Wide band code division multiple access (W CDMA)

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; LINEARIZATION; MICROPROCESSOR CHIPS; MOBILE TELECOMMUNICATION SYSTEMS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

MOBILE HANDSETS;

CODE DIVISION MULTIPLE ACCESS;

EID: 0038718731     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2003.811869     Document Type: Article

References (5)

1. T. Fowler, K. Burger, N.-S. Cheng, A. Samelis, E. Enobakhare, and S. Rohlfing, "Efficiency improvement techniques at low power levels for linear CDMA and WCDMA power amplifies," in Proc. IEEE RFIC Symp., June 2002, pp. 41-44.
2. J. H. Kim, J. H. Kim, Y. S. Noh, and C. S. Park, "A bias controlled HBT MMIC power amplifier with improved PAE for PCS applications," in Proc. 3rd Int. Conf. Microwave and Millimeter Wave Technology, Aug. 2002, pp. 725-728.
3. P. Asbeck, G. Hanington, P. F. Chen, and L. Larson, "Efficiency and linearity improvement in power amplifier for wireless communications," in IEEE GaAs IC Symp. Tech. Dig., 1998, pp. 15-18.
4. G. Hanington, P. Chen, P. Asbeck, and L. Larson, "High-efficiency power amplifier using dynamic power supply voltage for CDMA application," IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1471-1476, Aug. 1999.
5. Y. S. Noh, T. W. Lee, and C. S. Park, "Linearized high efficient HBT power amplifier module for L-band application," in IEEE GaAs IC Symp. Tech. Dig., 2001, pp. 197-200.