Small-angle X-ray scattering studies on oxide layer thickness at the porous silicon interface

Journal of Applied Crystallography

Volumn 36, Issue 3 I, 2003, Pages 740-743

  Bjorkqvist M ^a,b   Salonena, J ^a   Laine, E ^a  

^a UNIVERSITY OF TURKU   (Finland)

^b ÅBO AKADEMI UNIVERSITY   (Finland)

Author keywords

Diffuse layer thickness; Porous silicon; Small angle X ray scattering

Indexed keywords

OXIDE; SILICON;

CONFERENCE PAPER; HUMIDITY; OXIDATION; POROSITY; RADIATION SCATTERING; REACTION TIME; STORAGE TEMPERATURE; THICKNESS; WEIGHT;

EID: 0038715867     PISSN: 00218898     EISSN: None     Source Type: Journal    
DOI: 10.1107/S0021889803000165     Document Type: Conference Paper

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