High-electric-field electron transport at silicon/silicon-dioxide interface inversion layer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 3 B, 2003, Pages

  Tanaka, Masayasu ^a   Ueno, Hiroaki ^a   Matsushima, Osamu ^a   Miura Mattausch, Mitiko ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Carrier transport in inversion layer; Channel mobility; Electron saturation velocity; Silicon MOSFET

Indexed keywords

CHARGE CARRIERS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; INTERFACES (MATERIALS);

CARRIER TRANSPORT; CHANNEL MOBILITY; ELECTRON SATURATION VELOCITY; INVERSION LAYER;

MOSFET DEVICES;

EID: 0038699316     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l280     Document Type: Letter

References (9)

1. T. Ando, A. B. Fowler and F. Stern: Rev. Mod. Phys. 54 (1982) 437.
2. S. Takagi, M. Iwase and A. Toriumi: IEDM Tech. Dig. 88 (1988) 398.
3. F. F. Fang and A. B. Fowler: J. Appl. Phys. 41 (1970) 1825.
4. J. A. Copper, Jr. and D. F. Nelson: J. Appl. Phys. 54 (1983) 1445.
5. Medici Version 2002.2 User's Manual (Synopsys Inc., Fremont, California, 2002).
6. R. W. Coen and R. S. Muller: Solid-State Electron. 23 (1980) 35.
7. R. S. Huang and P. H. Ladbrooke: J. Appl. Phys. 48 (1977) 4791.
8. C. Canali, G. Ottaviani and A. A. Quaranta: J. Phys. & Chem. Solids 32 (1971) 1707.
9. C. Jacoboni, C. Canali, G. Ottaviani and A. A. Quaranta: Solid-State Electron. 20 (1977) 77.