Comparison of the removal efficiency for organic contaminants on silicon wafers stored in plastic boxes between UV/O3 and ECR oxygen plasma cleaning methods

Thin Solid Films

Volumn 435, Issue 1-2, 2003, Pages 227-231

  Choi, Kyunsuk ^a   Eom, Tae Jong ^a   Lee, Chongmu ^a  

^a Inha University   (South Korea)

Author keywords

Atomic force microscopy (AFM); Attenuated total reflection Fourier transform infrared spectroscopy (ATR FTIR); Dry cleaning; Electron cyclotron resonance (ECR) plasma; Organic contaminants; UV O3

Indexed keywords

ATOMIC FORCE MICROSCOPY; DRY CLEANING; ELECTRON CYCLOTRON RESONANCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; IMPURITIES; REMOVAL; ULTRAVIOLET RADIATION;

ATTENUATED TOTAL REFLECTION (ATR);

SILICON WAFERS;

EID: 0038685663     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00329-8     Document Type: Conference Paper

References (10)

1. Smith P., Lindley P. CP449. Seiler D.G., et al. Characterisation and Metrology for ULSI Technology: 1998 International Conference. 1998;133-139 American Institute of Physics.
2. Budde K.J., Holzapfel W.J. Gosele U., Abe T., Haisma J., Schmidt M.A. Semiconductor Wafer Bonding: Science Technology, and Applications, The Electrochemical Society Proceedings Series 1002, PV 92-7. 1992;The Electrochemical Society, Pennington, NJ. p. 271.
3. Kern W., Puotien D.A. RCA Rev. 31:1970;187.
4. Hara Y., Yamazaki T., Sugii T., Sugino R., Ito T., Ishikawa H. SPIE. 797:1987;90.
5. Kim H.-W., Reif R. Thin Solid Films. 289:1996;192.
6. Lee S., Lee J., Lee C. Jpn. J. Appl. Phys. 40:2001;5294.
7. Lee W., Jeon H. J. Korean Phys. Soc. 30:1997;S307.
8. Hattori T. Ultraclean Surface Processing of Silicon Wafers. 1995;376-378 Springer.
9. Kerr J.A., Parsonage M.J., Trotman-Dickenson A.F. Weast R.C. Handbook of Chemistry and Physics. 55th ed. 1974;CRC Press, Cleveland. p. F-204.
10. Chen J., Ren Z. Vaccum. 52:1999;411.