Near band edge non-radiative recombination of Si single crystal investigated by piezoelectric photothermal spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 2 A, 2003, Pages 358-362

  Memon, Aftab A ^a   Fukuyama, Atsuhiko ^a   Ikari, Tetsuo ^a  

^a UNIVERSITY OF MIYAZAKI   (Japan)

Author keywords

Band to band; Non radiative; Phonon; Photothermal; Piezoelectric; Silicon; Sur face states

Indexed keywords

PIEZOELECTRIC MATERIALS; SINGLE CRYSTALS; SPECTROSCOPY; TEMPERATURE;

BAND-TO-BAND TRANSITIONS; OPTICAL MODE PHONON ABSORPTION; PHONON EMISSION; PIEZOELECTRIC PHOTOTHERMAL SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0038682135     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.358     Document Type: Article

References (7)

1. J. I. Pankove: Optical Processes in Semiconductors (Dover, New York, 1975) pp. 38, 52, 160.
2. A. Zegadi, D. M. Bagnal, A. Belattar, R. D. Pilkington, M. A. Slifkin, A. E. Hill and R. D. Tomlinson: Thin Solid Films 226 (1993) 248.
3. T. Ikari, S. Shigetomi, Y. Koga, H. Nishimura, H. Yayama and A. Tomokiyo: Phys. Rev. B 37 (1988) 886.
4. H. Matsuyama, T. Ikari, H. Yokoyama and A. Tomokiyo: Jpn. J. Appl. Phys. 34 (1995) 2904
5. Y. P. Varshni: Physica 34 (1967) 149.
6. S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1981) 2nd ed., p. 13.
7. A. Many, Y. Goldstein and N. B. Grover: Semiconductor Surfaces (North Holland, Amsterdam, 1965) Chap. 9, pp. 371 and 372, 409-411.