Current concentration at defects in ZnO varistor material

Journal of Materials Research

Volumn 18, Issue 4, 2003, Pages 994-1002

  Anderson, R A ^a   Pike, G E ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; CURRENT DENSITY; NUMERICAL METHODS; ZINC OXIDE;

ELECTRICAL DEGRADATION;

VARISTORS;

EID: 0038676295     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2003.0136     Document Type: Article

References (7)

1. G. Pike, Breakdown in ZnO Varistors by High Power Electrical Pulses, Sandia National Laboratories Report SAND2001-2160, Unlimited Release (Sandia National Laboratories, Albuquerque, NM, July 2001).
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3. A. Vojta and D.R. Clarke, J. Appl. Phys. 81, 985 (1997).
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5. G.E. Pike, in Grain Boundaries in Semiconductors, edited by H. Leamy, G. Pike, and C. Seager (Mater. Res. Symp. Proc. 5, Pittsburgh, PA, 1982), pp. 369-379.
6. G.E. Pike, S.R. Kurtz, P.L. Gourley, H.R. Philipp, and L.M. Levinson, J. Appl. Phys. 57, 5512 (1985).
7. F. Greuter and G. Blatter, Semicond. Sci. Technol. 5, 111 (1990).