Reliability of Au bump - Cu direct interconnections fabricated by means of surface activated bonding method

Microelectronics Reliability

Volumn 43, Issue 5, 2003, Pages 751-756

  Wang, Qian ^a   Hosoda, Naoe ^a,b   Itoh, Toshihiro ^b   Suga, Tadatomo ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; BONDING; COPPER; DEGRADATION; ELECTRIC RESISTANCE; ELECTRONICS PACKAGING; FABRICATION; GOLD; HIGH TEMPERATURE TESTING; INTERFACES (MATERIALS); MICROSTRUCTURE; RELIABILITY; SHEAR STRENGTH; SURFACE PHENOMENA;

SURFACE ACTIVATED BONDING (SAB);

MICROELECTRONICS;

EID: 0038665259     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00039-8     Document Type: Article

References (6)

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4. Suga T. Feasibility of surface activated bonding for ultra-fine pitch interconnection - a new concept of bump-less direct bonding for system level packaging. In: Proceedings of the 50th Electronic Components and Technology Conference, ECTC2000, Las Vegas, NV, May 2000. p. 702-5.
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