SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 33, Issue 1-4, 1997, Pages 223-229

Passivation role of sulfur and etching behavior in plasma etched TiW using SF6 and BCl3 gases

(4) Jin, Il Sup a Park, Hyung Ho a Kwon, Kwang Ho b Kim, Chang Il c

a Yonsei University (South Korea)

b Hanseo University (South Korea)

c Anyang University (South Korea)

Author keywords

Reactive ion etching; Sulfur; TiW; X ray photoelectron spectroscopy

Indexed keywords

ALUMINUM; BORON COMPOUNDS; CHEMICAL BONDS; INTERDIFFUSION (SOLIDS); METALLIZING; PASSIVATION; REACTIVE ION ETCHING; SUBSTRATES; SULFUR COMPOUNDS; SURFACE CLEANING; TITANIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIFFUSION BARRIERS; TITANIUM TUNGSTATE;

MICROELECTRONIC PROCESSING;

EID: 0038657483 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/s0167-9317(96)00049-4 Document Type: Article

Times cited : (3)

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