A Silicon BiCMOS direct up-conversion transmitter IC for CDMA2000 with linear-in-dB power optimized RF level control

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2003, Pages

  Daanen, A ^a   Aggarwal, S ^a   Locher, M ^a   Redman White, W ^a,b   Charlon, O ^a   Landesman, A ^a   Judson, M ^a   Bracey, M ^a   Duperray, D ^a   Razzell, C ^a   Akylas, V ^a   Brunel, D ^a   Comte, R ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CALIBRATION; CELLULAR MANUFACTURING; CODE DIVISION MULTIPLE ACCESS; GAIN CONTROL; POWER CONTROL; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; TELEPHONE SETS; TRANSMITTERS;

CELLULAR HANDSET; DIRECT-UP CONVERSION TRANSMITTER; MIXER STRUCTURES; PHASE NOISE; RF LEVEL CONTROL;

CMOS INTEGRATED CIRCUITS;

EID: 0038645358     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. K. Sahota et al, "A Base-Band to RF BiCMOS Transmitter RFIC for Dual-Band CDMA/AMPS Wireless Handsets," Proc. of RFIC Symposium, pp. 129-132, 2000.
2. M. Reddy et al, "Highly integrated, Dual Band/tri-Mode SiGe BiCMOS Transmitter IC for CDMA Wireless Applications," Proc. of RFIC Symposium, pp. 35-38, 2002.
3. S. Aggaral et al, "A Highly Integrated Dual-Band Triple-Mode Transmit IC for CDMA2000 Applications," BCTM Proceedings, pp. 57-60, September 2002.