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Volumn 4889, Issue 1, 2002, Pages 702-712

Characteristics of selective MoSiON etching in a chlorine plasma

Author keywords

Chlorine; MoSiON; Polymer; Selectivity

Indexed keywords

CRYSTAL DEFECTS; DRY ETCHING; MOLYBDENUM COMPOUNDS; POLYMERS; SEMICONDUCTING GLASS;

EID: 0038642111     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.467492     Document Type: Conference Paper
Times cited : (1)

References (8)
  • 1
    • 0041553833 scopus 로고    scopus 로고
    • 2 plasma etching of Si(100): Damaged surface layer studied by in situ spectroscopic ellipsometry
    • 2 plasma etching of Si(100) : Damaged surface layer studied by in situ spectroscopic ellipsometry ", J.Vac.Sci.Technol.A 15(3), 604(1997)
    • (1997) J.Vac.Sci.Technol.A , vol.15 , Issue.3 , pp. 604
    • Layadi, N.1    Donnelly, V.M.2    Lee, J.T.C.3
  • 3
    • 0032644220 scopus 로고    scopus 로고
    • Characterization of the post dry-etch cleaning of silicon for Ti-self-aligned suicide technology
    • Y.B.Kim,Mikhail R.Baklanov, T.Conard, M.D.Potter, and S.Vanhaeleemeersch, " Characterization of the post dry-etch cleaning of silicon for Ti-self-aligned suicide technology", J.Electrochem.Soc.,146(4), 1549(1999)
    • (1999) J.Electrochem.Soc. , vol.146 , Issue.4 , pp. 1549
    • Kim, Y.B.1    Baklanov, M.R.2    Conard, T.3    Potter, M.D.4    Vanhaeleemeersch, S.5
  • 4
    • 0031120552 scopus 로고    scopus 로고
    • Decoupled plasma source technology: Process region choices for suicide etching
    • Shaoher Pan, Songlin Xu and Dragan Podlesnik, " Decoupled Plasma Source Technology : Process Region Choices For Suicide Etching", Jpn.J.Appl.Phys. Vol.36, Part 1, No.4B, pp2514-2520(1997)
    • (1997) Jpn.J.Appl.Phys. , vol.36 , Issue.4 PART 1 AND B , pp. 2514-2520
    • Pan, S.1    Xu, S.2    Podlesnik, D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.