Tunnel magnetoresistance in planar junctions with ferromagnetic barriers

Physica Status Solidi (A) Applied Research

Volumn 196, Issue 1 SPEC., 2003, Pages 109-112

  Wilczynski M ^a   Barnas J ^b,c   Swirkowicz R ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b ADAM MICKIEWICZ UNIVERSITY   (Poland)

^c INSTITUTE OF MOLECULAR PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON TUNNELING; FERMI LEVEL; FERROMAGNETIC MATERIALS; MAGNETIC MOMENTS; SEMICONDUCTOR JUNCTIONS;

BIAS VOLTAGE DEPENDENCE; FERROMAGNETIC BARRIER; NONMAGNETIC ELECTRODE; TUNNEL MAGNETORESISTANCE EFFECT;

MAGNETORESISTANCE;

EID: 0038640382     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306365     Document Type: Article

References (6)

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