Absence of zero-bias anomaly in spin-polarized vacuum tunneling in Co(0001)

Physical Review Letters

Volumn 90, Issue 11, 2003, Pages

  Ding, H F ^a   Wulfhekel, W ^a   Henk, J ^a   Bruno, P ^a   Kirschner, J ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CALCULATIONS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; ELECTRONIC STRUCTURE; MAGNETIC MATERIALS; MAGNETORESISTANCE; POLARIZATION; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE;

BALLISTIC TUNNELING; BIAS VOLTAGE DEPENDENT; SPIN POLARIZED VACUUM TUNNELING; TUNNEL MAGNETORESISTANCE;

COBALT;

EID: 0038640320     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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